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Resolve #164 by consolidating most parts in the comment suggestion.

tags/REL_2
padre
commit
47cf21d85a
Se han modificado 4 ficheros con 16 adiciones y 16 borrados
  1. +1
    -1
      hardware/conn-mchip.sch
  2. +5
    -5
      hardware/dscomm.kicad_pcb
  3. +6
    -6
      hardware/dscomm.net
  4. +4
    -4
      hardware/feat-mchip.sch

+ 1
- 1
hardware/conn-mchip.sch Ver fichero

@@ -69,7 +69,7 @@ P 6650 3400
AR Path="/5F53D5B5/600B7E79" Ref="R?" Part="1"
AR Path="/60040981/600B7E79" Ref="R9" Part="1"
F 0 "R9" H 6720 3446 50 0000 L CNN
F 1 "100K" H 6720 3355 50 0000 L CNN
F 1 "10K" H 6720 3355 50 0000 L CNN
F 2 "Resistor_SMD:R_0805_2012Metric" V 6580 3400 50 0001 C CNN
F 3 "~" H 6650 3400 50 0001 C CNN
1 6650 3400


+ 5
- 5
hardware/dscomm.kicad_pcb Ver fichero

@@ -4118,7 +4118,7 @@
(fp_text reference R9 (at 0 -1.6) (layer F.SilkS)
(effects (font (size 1 1) (thickness 0.15)))
)
(fp_text value 100K (at 0 1.65) (layer F.Fab)
(fp_text value 10K (at 0 1.65) (layer F.Fab)
(effects (font (size 1 1) (thickness 0.15)))
)
(fp_line (start -1 0.6) (end -1 -0.6) (layer F.Fab) (width 0.1))
@@ -4190,7 +4190,7 @@
(fp_text reference R11 (at 0 -1.695001 90) (layer F.SilkS)
(effects (font (size 1 1) (thickness 0.15)))
)
(fp_text value 3K9 (at 0 1.65 90) (layer F.Fab)
(fp_text value 10K (at 0 1.65 90) (layer F.Fab)
(effects (font (size 1 1) (thickness 0.15)))
)
(fp_line (start -1 0.6) (end -1 -0.6) (layer F.Fab) (width 0.1))
@@ -4226,7 +4226,7 @@
(fp_text reference R12 (at 2.3175 0 180) (layer F.SilkS)
(effects (font (size 0.7 0.7) (thickness 0.1)))
)
(fp_text value 3K9 (at 0 1.65 90) (layer F.Fab)
(fp_text value 10K (at 0 1.65 90) (layer F.Fab)
(effects (font (size 1 1) (thickness 0.15)))
)
(fp_text user %R (at 0 0 90) (layer F.Fab)
@@ -4298,7 +4298,7 @@
(fp_text reference R14 (at 0 1.5 90) (layer F.SilkS)
(effects (font (size 0.7 0.7) (thickness 0.1)))
)
(fp_text value 4K7 (at 0 1.65 90) (layer F.Fab)
(fp_text value 10K (at 0 1.65 90) (layer F.Fab)
(effects (font (size 1 1) (thickness 0.15)))
)
(fp_text user %R (at 0 0 90) (layer F.Fab)
@@ -4334,7 +4334,7 @@
(fp_text reference R15 (at -2.25 0.25 unlocked) (layer F.SilkS)
(effects (font (size 0.7 0.7) (thickness 0.1)))
)
(fp_text value 4K7 (at 0 1.65 90) (layer F.Fab)
(fp_text value 10K (at 0 1.65 90) (layer F.Fab)
(effects (font (size 1 1) (thickness 0.15)))
)
(fp_line (start -1 0.6) (end -1 -0.6) (layer F.Fab) (width 0.1))


+ 6
- 6
hardware/dscomm.net Ver fichero

@@ -1,7 +1,7 @@
(export (version D)
(design
(source dscomm.sch)
(date "Do 14 Jan 2021 15:00:43 CET")
(date "Do 14 Jan 2021 15:09:29 CET")
(tool "Eeschema 5.1.5+dfsg1-2build2")
(sheet (number 1) (name /) (tstamps /)
(title_block
@@ -358,14 +358,14 @@
(sheetpath (names /Sheet601C3EDD/) (tstamps /601C3EDE/))
(tstamp 601DBF43))
(comp (ref R15)
(value 4K7)
(value 10K)
(footprint Resistor_SMD:R_0805_2012Metric)
(datasheet ~)
(libsource (lib Device) (part R) (description Resistor))
(sheetpath (names /Sheet601C3EDD/) (tstamps /601C3EDE/))
(tstamp 601DBF61))
(comp (ref R14)
(value 4K7)
(value 10K)
(footprint Resistor_SMD:R_0805_2012Metric)
(datasheet ~)
(libsource (lib Device) (part R) (description Resistor))
@@ -386,14 +386,14 @@
(sheetpath (names /Sheet601C3EDD/) (tstamps /601C3EDE/))
(tstamp 5F68CC64))
(comp (ref R11)
(value 3K9)
(value 10K)
(footprint Resistor_SMD:R_0805_2012Metric)
(datasheet ~)
(libsource (lib Device) (part R) (description Resistor))
(sheetpath (names /Sheet601C3EDD/) (tstamps /601C3EDE/))
(tstamp 5F6983A1))
(comp (ref R12)
(value 3K9)
(value 10K)
(footprint Resistor_SMD:R_0805_2012Metric)
(datasheet ~)
(libsource (lib Device) (part R) (description Resistor))
@@ -651,7 +651,7 @@
(sheetpath (names /Sheet60040980/) (tstamps /60040981/))
(tstamp 6006812D))
(comp (ref R9)
(value 100K)
(value 10K)
(footprint Resistor_SMD:R_0805_2012Metric)
(datasheet ~)
(libsource (lib Device) (part R) (description Resistor))


+ 4
- 4
hardware/feat-mchip.sch Ver fichero

@@ -75,7 +75,7 @@ P 7150 3850
AR Path="/5F53D5B5/601DBF61" Ref="R?" Part="1"
AR Path="/601C3EDE/601DBF61" Ref="R15" Part="1"
F 0 "R15" H 7220 3896 50 0000 L CNN
F 1 "4K7" H 7220 3805 50 0000 L CNN
F 1 "10K" H 7220 3805 50 0000 L CNN
F 2 "Resistor_SMD:R_0805_2012Metric" V 7080 3850 50 0001 C CNN
F 3 "~" H 7150 3850 50 0001 C CNN
1 7150 3850
@@ -88,7 +88,7 @@ P 6750 3400
AR Path="/5F53D5B5/601DBF67" Ref="R?" Part="1"
AR Path="/601C3EDE/601DBF67" Ref="R14" Part="1"
F 0 "R14" H 6820 3446 50 0000 L CNN
F 1 "4K7" H 6820 3355 50 0000 L CNN
F 1 "10K" H 6820 3355 50 0000 L CNN
F 2 "Resistor_SMD:R_0805_2012Metric" V 6680 3400 50 0001 C CNN
F 3 "~" H 6750 3400 50 0001 C CNN
1 6750 3400
@@ -201,7 +201,7 @@ L Device:R R11
U 1 1 5F6983A1
P 4550 3400
F 0 "R11" H 4620 3446 50 0000 L CNN
F 1 "3K9" H 4620 3355 50 0000 L CNN
F 1 "10K" H 4620 3355 50 0000 L CNN
F 2 "Resistor_SMD:R_0805_2012Metric" V 4480 3400 50 0001 C CNN
F 3 "~" H 4550 3400 50 0001 C CNN
1 4550 3400
@@ -212,7 +212,7 @@ L Device:R R12
U 1 1 5F698FB0
P 5050 3400
F 0 "R12" H 5120 3446 50 0000 L CNN
F 1 "3K9" H 5120 3355 50 0000 L CNN
F 1 "10K" H 5120 3355 50 0000 L CNN
F 2 "Resistor_SMD:R_0805_2012Metric" V 4980 3400 50 0001 C CNN
F 3 "~" H 5050 3400 50 0001 C CNN
1 5050 3400


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